r07ds0893ej0100 rev.1.00 page 1 of 9 nov 01, 2012 preliminary datasheet rjh60d1dpp-e0 600v - 10a - igbt application: inverter features ? short circuit withstand time (5 ? s typ.) ? low collector to emitter saturation voltage v ce(sat) = 1.9 v typ. (at i c = 10 a, v ge = 15 v, ta = 25c) ? built in fast recovery diode (70 ns typ.) in one package ? trench gate and thin wafer technology ? high speed switching t f = 75 ns typ. (at v cc = 300 v, v ge = 15 v, i c = 10 a, rg = 5 ? , inductive load) outline renesas package code: prss0003ag-a (package name: to-220fp) 1 2 3 c 1. gate 2. collecto r 3. emitter g e absolute maximum ratings (ta = 25c) item symbol ratings unit collector to emitter voltage / diode reverse voltage v ces / v r 600 v gate to emitter voltage v ges 30 v tc = 25c i c 20 a collector current tc = 100c i c 10 a collector peak current ic(peak) note1 40 a collector to emitter diode forward current i df 10 a collector to emitter diode forward peak current i d (peak) note1 40 a collector dissipation p c note2 30 w junction to case the rmal resistance (igbt) ? j-c note2 4.1 c/ w junction to case thermal resistance (diode) ? j-cd note2 7.2 c/ w junction temperature tj 150 c storage temperature tstg ?55 to +150 c notes: 1. pw ? 10 ? s, duty cycle ? 1% 2. value at tc = 25 ?c r07ds0893ej0100 rev.1.00 nov 01, 2012
rjh60d1dpp-e0 preliminary r07ds0893ej0100 rev.1.00 page 2 of 9 nov 01, 2012 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions collector to emitter breakdown voltage v br(ces) 600 ? ? v ? i c =10 ? a, v ge = 0 zero gate voltage collector current / diode reverse current i ces / i r ? ? 5 ? a v ce = 600 v, v ge = 0 gate to emitter leak current i ges ? ? 1 ? a v ge = 30 v, v ce = 0 gate to emitter cutoff voltage v ge(off) 4.0 ? 6.0 v v ce = 10 v, i c = 1 ma v ce(sat) ? 1.9 2.5 v i c = 10 a, v ge = 15 v note3 collector to emitte r saturation voltage v ce(sat) ? 2.6 ? v i c = 20 a, v ge = 15 v note3 input capacitance cies ? 275 ? pf output capacitance coes ? 25 ? pf reveres transfer capacitance cres ? 8 ? pf v ce = 25 v v ge = 0 f = 1 mhz total gate charge qg ? 13 ? nc gate to emitter charge qge ? 3 ? nc gate to collector charge qgc ? 5 ? nc v ge = 15 v v ce = 300 v i c = 10 a turn-on delay time t d(on) ? 30 ? ns rise time t r ? 13 ? ns turn-off delay time t d(off) ? 42 ? ns fall time t f ? 75 ? ns turn-on energy e on ? 0.10 ? mj ? turn-off energy e off ? 0.13 ? mj ? total switching energy e total ? 0.23 ? mj ? v cc = 300 v v ge = 15 v i c = 10 a rg = 5 ?? (inductive load) short circuit withstand time t sc 3.0 5.0 ? ? s v ge ? 360 v, v ge = 15 v frd forward voltage v f ? 1.4 1.9 v i f = 10 a note3 frd reverse recovery time t rr ? 70 ? ns frd reverse recovery charge q rr ? 0.11 ? ? c frd peak reverse recovery current i rr ? 3.5 ? a i f = 10 a di f /dt = 100 a/ ? s notes: 3. pulse test.
rjh60d1dpp-e0 preliminary r07ds0893ej0100 rev.1.00 page 3 of 9 nov 01, 2012 main characteristics collector current i c (a) case temperature tc (c) maximum dc collector current vs. case temperature 30 20 15 10 5 0 0 25 50 10075 125 150 175 collector current i c (a) collector to emitter voltage v ce (v) turn-off soa 0 200 400 600 800 collector dissipation pc (w) case temperature tc (c) collector dissipation vs. case temperature 25 60 50 40 30 20 10 0 collector current i c (a) collector to emitter voltage v ce (v) maximum safe operation area 21 0 345 0 40 30 20 10 igbt output characteristics (typical) collector current i c (a) collector to emitter voltage v ce (v) 0 40 30 20 10 igbt output characteristics (typical) collector current i c (a) collector to emitter voltage v ce (v) v ge = 8 v 10 v 12 v 15 v 18 v 21 0345 tc = 25 c pulse test tc = 150 c pulse test v ge = 8 v 15 v 10 v 12 v 18 v 100 10 0.1 1 0.01 1 100 10 1000 tc = 25c single pulse 100 s pw = 10 s 0 25 50 10075 125 150 175 40 30 20 10 0
rjh60d1dpp-e0 preliminary r07ds0893ej0100 rev.1.00 page 4 of 9 nov 01, 2012 4.0 3.0 2.0 3.5 2.5 1.5 1.0 25 0 25 75 125 50 100 150 10 a 5 a i c = 20 a v ge = 15 v pulse test 0 40 30 20 10 0 4 812 20 16 v ce = 10 v pulse test t c = 25 c 150 c 10 8 6 4 2 0 t ypical t ransfer characteristics collector current i c (a) gate to emitter vo ltage v ge (v) collector to emitter saturation vo ltage vs. case t emparature (t ypical) collector to emitter saturat ion vo ltage v ce(sat) (v) case t emparature t c ( c) collector to emitter saturat ion vo ltage vs. gate to emitter vo ltage (t ypical) collector to emitter saturat ion vo ltage v ce(sat) (v) gate to emitter vo ltage v ge (v) collector to emitter saturat ion vo ltage vs. gate to emitter vo ltage (t ypical) collector to emitter saturat ion vo ltage v ce(sat) (v) gate to emitter vo ltage v ge (v) gate to emitter cutoff vo ltage vs. case t emparature (t ypical) 25 0 25 75 125 50 100 150 gate to emitter cutoff vo ltage v ge(off) (v) v ce = 10 v pulse test case t emparature t c (c) 1 ma i c = 10 ma 5 4 3 2 1 0 frequency characteristics (t ypical) collector current i c(rsm) (a) frequency f (khz) 11 0 0 10 1000 tj = 125c, tc = 90c v ce = 400 v, v ge = 15 v rg = 5 , duty = 50% 0 collector current wave (square wave) 1 3 2 4 5 4 812 20 16 t c = 25 c pulse t est i c = 20 a 10 a 5 a 1 3 2 4 5 4 812 20 16 t c = 150 c pulse t est i c = 20 a 10 a 5 a
rjh60d1dpp-e0 preliminary r07ds0893ej0100 rev.1.00 page 5 of 9 nov 01, 2012 1000 10 100 1 switching characteristics (t ypical) (1) collector current i c (a) (inductive load) switching ti mes t (ns) 1 10 100 1 10 100 switching characteristics (t ypical) (3) t d(on) gate resistance rg () (inductive load) switching ti me t (ns) 10 100 1000 v cc = 300 v, v ge = 15 v i c = 10 a, tc = 150 c t f t d(off) t r 10 100 1000 5025 150 75 125 100 switching characteristics (t ypical) (5) t d(on) case t emperature t c (c) (inductive load) switching ti mes t (ns) v cc = 300 v, v ge = 15 v i c = 10 a, rg = 5 t f t d(off) t r v cc = 300 v, v ge = 15 v rg = 5 , tc = 150 c t d(off) t d(on) t f t r 1 0.1 0.01 1 0.01 0.1 10 0.1 1 0.01 11 0 100 gate registance rg () (inductive load) e off eon swithing energy losses e (mj) switching characteristics (t ypical) (4) v cc = 300 v, v ge = 15 v i c = 10 a, tc = 150 c e off eon v cc = 300 v, v ge = 15 v rg = 5 , tc = 150 c swithing energy losses e (mj) collector current i c (a) (inductive load) switching characteristics (t ypical) (2) 11 0 100 5025 150 75 125 100 case t emperature t c (c) (inductive load) switching characteristics (t ypical) (6) e off eon swithing energy losses e (mj) v cc = 300 v, v ge = 15 v i c =10 a, rg = 5
rjh60d1dpp-e0 preliminary r07ds0893ej0100 rev.1.00 page 6 of 9 nov 01, 2012 0 4 820 12 16 gate charge qg (nc) dynamic input characteristics (t ypical) 800 600 400 200 0 16 12 8 4 0 v cc = 300 v i c = 10 a tc = 25 c v ge v ce collector to emitter vo ltage v ce (v) gate to emitter vo ltage v ge (v) capacitance c (pf) 1 10 100 1000 0100 50 150 200 250 300 t ypical capacitance vs. collector to emitter vo ltage collector to emitter vo ltage v ce (v) cies coes cres v ge = 0 v f = 1 mhz tc = 25 c 0.5 0.4 0.3 0.2 0.1 diode current slope di f /dt (a/s) reverse recovery ti me t rr (ns) reverse recovery ti me vs. diode current slope (t ypical) 100 50 300 250 200 150 0 0 4 080 200 120 160 0 4 080 200 120 160 0 4 080 200 120 160 v cc = 300 v i f = 10 a tc = 150 c 25 c diode current slope di f /dt (a/s) reverse recovery current i rr (a) reverse recovery current vs. diode current slope (t ypical) diode current slope di f /dt (a/s) reverse recovery charge q rr (c) reverse recovery charge vs. diode current slope (t ypical) 0 v cc = 300 v i f = 10 a tc = 150 c 25 c 12 8 4 16 0 v cc = 300 v i f = 10 a tc = 150 c 25 c c-e diode forward vo ltage v cef (v) forward current vs. forward vo ltage (t ypical) forward current i f (a) 0 40 30 20 10 0123 4 t c = 25 c 150 c v ce = 0 v pulse test
rjh60d1dpp-e0 preliminary r07ds0893ej0100 rev.1.00 page 7 of 9 nov 01, 2012 0.01 0.1 10 1 100 1 m10 m 100 m1 10 100 p dm pw t d = pw t j ? c(t) = s (t) ? j ? c j ? c = 4.1c/w, tc = 25c tc = 25c 0.05 0.2 0.1 0.5 d = 1 0.01 0.02 1 shot pulse 0.01 1 0.1 10 100 1 m10 m 100 m1 10 p dm pw t d = pw t j ? c(t) = s (t) ? j ? c j ? c = 7.2c/w, tc = 25c 0.05 0.2 0.1 0.5 d = 1 tc = 25c pulse width pw (s) normalized transient thermal impedance s (t) normalized transient thermal impedance vs. pulse width (igbt) pulse width pw (s) normalized transient thermal impedance s (t) normalized transient thermal impedance vs. pulse width (diode) 100 0.01 0.02 1 shot pulse
rjh60d1dpp-e0 preliminary r07ds0893ej0100 rev.1.00 page 8 of 9 nov 01, 2012 switching time test circuit diode reverse recovery time test circuit waveform waveform diode clamp d.u.t d.u.t rg l v cc v cc t rr i rr di f /dt 0.9 i rr i f i f rg t d(off) t d(on) t f t r 90% 90% 90% 10% 10% 10% v ge i c 0.5 i rr l 0
rjh60d1dpp-e0 preliminary r07ds0893ej0100 rev.1.00 page 9 of 9 nov 01, 2012 package dimension 5.08 0.20 3.18 0.20 6.68 0.20 ?? 3.18 0.10 0.80 0.20 1.28 0.30 2.76 0.20 4.7 0.2 0.50 2.54 0.20 max 1.47 3.3 0.2 15.87 0.20 12.98 0.30 10.16 0.20 unit: mm ? 1.9 g m ass[t y p. ] ? pr ss0003 a g - a r ene s a s code jeita packa g e cod e pr e vi ous code packa g e nam e t o -22 0 f p ordering information orderable part number quan tity shipping container rjh60d1dpp-e0#t2 1000 pcs box (tube)
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